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Foreword 1. Basic Properties and Applications of ZnO (V.A. Coleman and C. Jagadish) 2. Doping and Defects in ZnO (D.C. Look) 3. Synthesis and Characterization of Nitrogen-Doped ZnO Films Grown by… (More)
Controlling the crystallographic phase purity of III-V nanowires is notoriously difficult, yet this is essential for future nanowire devices. Reported methods for controlling nanowire phase require… (More)
III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to their unique one dimensional geometry. High quantum efficiency, defined as QE=τnr/(τnr+τr), where… (More)
The deformation behavior of bulk ZnO single crystals is studied by a combination of spherical nanoindentation and atomic force microscopy. Results show that ZnO exhibits plastic deformation for… (More)
This work was supported by the University of Cincinnati. Australian authors gratefully acknowledge the financial support from the Australian Research Council.
Large energy shifts in the luminescence emission from strained InGaAs quantum dots are observed as a result of postgrowth annealing and also when raising the upper cladding layer growth temperatures.… (More)
We report on an experimental study of the intersubband optical response of an In0.5Ga0.5As/GaAs quantum dot solar cell (QDSC). By calculating the quantum dot absorption cross section, the strength of… (More)
We demonstrate vertically aligned epitaxial GaAs nanowires of excellent crystallographic quality and optimal shape, grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. This is… (More)
The time-resolved conductivity of isolated GaAs nanowires is investigated by optical-pump terahertz-probe time-domain spectroscopy. The electronic response exhibits a pronounced surface plasmon mode… (More)
We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs… (More)