Chendong Zhang

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The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and(More)
We report on tuning interfacial properties of epitaxially-grown graphenes with different kinds of metal substrates based on scanning tunneling microscopy experiments and density functional theory calculations. Three kinds of metal substrates, Ni͑111͒, Pt͑111͒, and Ru͑0001͒, show different interactions with the epitaxially grown graphene at the interfaces.(More)
  • Chendong Zhang, Yuxuan Chen, +5 authors Chih-Kang Shih
  • 2016
Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal dichalcogenides thin films have sensitive layer dependence, it is natural to create lateral heterojunctions (HJs) using(More)
By using direct growth, we create a rotationally aligned MoS2/WSe2 hetero-bilayer as a designer van der Waals heterostructure. With rotational alignment, the lattice mismatch leads to a periodic variation of atomic registry between individual van der Waals layers, exhibiting a Moiré pattern with a well-defined periodicity. By combining scanning tunneling(More)
The van der Waals interaction in vertical heterostructures made of two-dimensional (2D) materials relaxes the requirement of lattice matching, therefore enabling great design flexibility to tailor novel 2D electronic systems. Here we report the successful growth of MoSe2 on single-layer hexagonal boron nitride (hBN) on the Ru(0001) substrate using molecular(More)
La0.67Ca0.33MnO3 thin films were epitaxially grown on miscut MgO(001) substrates by pulsed laser ablation. Electrical transport properties were studied by using an ultra high vacuum, four-probe STM system at different temperatures. Anomalous resistivity behavior and metal-insulator transition temperatures were found, both of which are highly dependent upon(More)
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