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This paper presents the first statistical model of Vt fluctuation (&#x00394;Vt<sub>cell</sub>) in a floating-gate flash memory due to random telegraph noise. It considers current-path percolation, which generates a large-amplitude-noise tail, caused by dopant induced surface potential non-uniformity It concludes that the impact of scaling is weaker than the(More)
An accurate and simple lumped-element extension of the BSIM3v3 MOSFET model for small-signal radio-frequency circuit simulation is proposed and investigated. Detailed comparisons of the small-signal y and s parameters with both two-dimensional device simulations and measurement data are presented. A procedure is developed to extract the values of two lumped(More)
  • ChenMing Hu
  • 1979 International Electron Devices Meeting
  • 1979
The lucky electron model proposes that an electron is emitted into SiO<inf>2</inf>by first gaining enough energy without suffering an energy stripping collision in the channel and then being redirected toward the Si/SiO<inf>2</inf>interfact. A closed-form expression for the gate current has successfully reproduced the dependence on(More)
Absrract-Hot-electron currents and degradation in deep submicrometer MOSFET's at 3.3 V and below are studied. Using a device with L,,, = 0.15 pm and T,,, = 7.5 nm, substrate current is measured at a drain bias as low as 0.7 V; gate current is measured at a drain bia5 as low as 1.75 V. Using the charge-pumping technique, hot-electron degradation is also(More)
As the scaling of CMOS transistors extends to the sub-20 nm regime, the most challenging aspect of device design is the control of the off-state current. The traditional methods for controlling leakage current via the substrate doping profile will be difficult to implement at these dimensions. A promising method for controlling leakage in sub-20 nm(More)
  • ChenMing Hu
  • 1983 International Electron Devices Meeting
  • 1983
The physics of several hot-electron currents and their impact on IC performance and reliability is reviewed,<tex>V_{d} - V_{dsat}</tex>is emphasized as the driving force of all hot-electron effects.<tex>V_{g}, V_{sub}</tex>, and<tex>L</tex>affect the hot-electron effects only through their influence on V<inf>dsat</inf>. A simple hot-electron sealing rule is(More)
  • ChenMing Hu
  • Proceedings of Technical Program of 2012 VLSI…
  • 2012
FinFET provides needed relief to ICs from performance, power, and device variation predicaments. It also provides higher carrier mobility, especially at low voltage near the threshold voltage, giving promise to practical near-threshold circuits. Another new transistor conceived simultaneously with FinFET, UTB-SOI FET, is also entering production. Together(More)
By integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate FinFETs with unprecedented levels of chip-area efficiency. This makes it suitable for ultralarge-scale integration high-performance(More)