Che-Kai Lin

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A variety of process developments on the gate module and design optimization of the EPI structure were performed to support yield enhancement of 0.25μm GaN HEMT technology. The technological developments to be discussed pertain to the results of a gate pre-treatment DOE experiment, to implement the best condition for reliability improvement; a gate module(More)
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200°C, 400°C and 600°C post-deposition annealing due to its high binding energy (835.7 eV)(More)
The RF performance obtainable from a device often falls short of the expectations raised by analysis of the DCIV curves. This difference is typically associated with thermal or trapping effects. Hence, RF performance is traditionally assessed using load pull techniques, which can identify the optimum operating conditions, but cannot explain the shortfall.(More)
Abstract A variety of process modules where developed on 4” GaN on SiC substrates to support a 0.25μm HEMT technology based on i-line photolithographic tools. The technological developments to be discussed pertain to a bi-layer photo-resist shrink on top of Silicon Nitride stress-optimized films; a low-damage inductively-coupled plasma etch, to tailor the(More)