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Multilayer MoS2 prepared by one-time and repeated chemical vapor depositions: anomalous Raman shifts and transistors with high ON/OFF ratio
We show that multilayer molybdenum disulfide (MoS2) grown with the chemical vapor deposition (CVD) may exhibit quite distinct behaviors of Raman shifts from those of exfoliated ones. The anomalousExpand
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High-speed integrated micro-LED array for visible light communication.
In this Letter, we report high-speed integrated 14 µm in diameter micro-light-emitting diode (μLED) arrays with the parallel configuration, including ${2} \times {2}$2×2, ${2} \times {3}$2×3, ${2}Expand
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12 GHz spontaneous optical bandwidth tunnel junction light-emitting transistor
In this report, a quantum-well based light-emitting transistor with an Al0.1Ga0.9As/In0.05Ga0.95As tunnel junction collector in a common-emitter configuration with a double-digit gigahertz optical −3Expand
  • 2
Characteristics of Blue GaN/InGaN Quantum-Well Light-Emitting Transistor
We demonstrate simultaneous electrical and optical modulations of the first GaN/InGaN quantum-well light-emitting transistor (QW-LET) which contains an In0.15 Ga0.85N QW in the heavily p-doped In0.05Expand
  • 1
Experimental analysis of the Schottky barrier height of metal contacts in black phosphorus field-effect transistors
Compared to graphene and MoS2, studies on metal contacts to black phosphorus (BP) transistors are still immature. In this work, we present the experimental analysis of titanium contacts on BP basedExpand
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850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers for 40 Gb/s Error-Free Transmission up to 500 m in OM4 Fiber
A single-mode (SM) vertical-cavity surface-emitting laser (VCSEL) constructed using a multi-oxidation structure was demonstrated. With the help of an undoped bottom mirror for reduction of opticalExpand
  • 1
Single-Mode VCSEL Transmission for Short Reach Communications
Single-mode VCSEL technology has advanced significantly in the past few years. The advantages of single-mode VCSELs lie primarily on the narrower linewidth, lower numerical aperture, and smaller spotExpand
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Multimode VCSEL Enables 42-GBaud PAM-4 and 35-GBaud 16-QAM OFDM for 100-m OM5 MMF Data Link
By enhancing the differential gain and reducing the capacitance of the 850-nm multi-mode vertical cavity surface emitting laser (VCSEL) with an analog bandwidth beyond 25 GHz via the use ofExpand
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Design and Optimization of VCSELs for up to 40-Gb/s Error-Free Transmission Through Impurity-Induced Disordering
This article describes an optimized design and process for the improvement of the electrical properties of vertical-cavity surface-emitting lasers (VCSELs) via the impurity-induced disordering (IID)Expand
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High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate
In this letter, we successfully demonstrated a AlGaN/GaN high-electron mobility transistor on silicon substrate with high product of maximum oscillation frequency (f<sub>max</sub>) and gate lengthExpand
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