Chao-Chi Hong

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The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by(More)
A novel repeated spike oxidation (RSO) technique had been used to grow low-temperature thin-gate oxide. Around the similar effective oxide thickness extracted from the capacitance-voltage (C-V) curves under quantum mechanical effect consideration, the leakage currents of RSO samples were near one order of magnitude lower than those of typical ones. Flat(More)
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