Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene
- Changgu Lee, Xiaoding Wei, J. Kysar, J. Hone
- Materials ScienceScience
- 18 July 2008
Graphene is established as the strongest material ever measured, and atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
Atomically thin MoS₂: a new direct-gap semiconductor.
- K. Mak, Changgu Lee, J. Hone, J. Shan, T. Heinz
- Physics, Materials SciencePhysical Review Letters
- 5 April 2010
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
Anomalous lattice vibrations of single- and few-layer MoS2.
This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime by characterized by Raman spectroscopy.
Tightly bound trions in monolayer MoS2.
The spectroscopic identification in a monolayer MoS(2) field-effect transistor of tightly bound negative trions, a quasiparticle composed of two electrons and a hole is reported, which has no analogue in conventional semiconductors.
Frictional Characteristics of Atomically Thin Sheets
- Changgu Lee, Qunyang Li, J. Hone
- PhysicsScience
- 1 March 2010
Using friction force microscopy, the nanoscale frictional characteristics of atomically thin sheets of graphene, molybdenum disulfide, niobium diselenide, and hexagonal boron nitride are compared to those of their bulk counterparts, suggesting that the trend arises from the thinner sheets’ increased susceptibility to out-of-plane elastic deformation.
High-Strength Chemical-Vapor–Deposited Graphene and Grain Boundaries
- Gwan‐Hyoung Lee, Ryan C. Cooper, J. Hone
- Materials ScienceScience
- 31 May 2013
It is shown that the elastic stiffness of CVD-graphene is identical to that of pristine graphene if postprocessing steps avoid damage or rippling, and its strength is only slightly reduced despite the existence of grain boundaries.
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
- Gwan Hyoung Lee, Young-Jun Yu, J. Hone
- Physics
- 16 December 2011
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride (h-BN) on gold-coated mica was investigated using conductive atomic force microscopy. Low-bias direct tunneling was…
Elastic and frictional properties of graphene
- Changgu Lee, Xiaoding Wei, Qunyang Li, R. Carpick, J. Kysar, J. Hone
- Physics
- 1 December 2009
We describe studies of the elastic properties and frictional characteristics of graphene samples of varying thickness using an atomic force microscope. For tensile testing, graphene is suspended over…
Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.
- Gwan‐Hyoung Lee, Young-Jun Yu, J. Hone
- Materials ScienceACS Nano
- 14 August 2013
This work demonstrates field-effect transistors with MoS2 channels, hBN dielectric, and graphene gate electrodes, and takes advantage of the mechanical strength and flexibility of these materials to create flexible and transparent FETs that show unchanged performance up to 1.5% strain.
Investigation of Nonlinear Elastic Behavior of Two-Dimensional Molybdenum Disulfide
- Ryan C. Cooper, Changgu Lee, C. Marianetti, J. Hone, J. Kysar
- Engineering
- 28 February 2012
This research explores the nonlinear elastic properties of two-dimensional molybdenum disulfide. We derive a thermodynamically rigorous nonlinear elastic constitutive equation and then calculate the…
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