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Homophase Junction for Promoting Spatial Charge Separation in Photocatalytic Water Splitting
The widespread heterojunction or p–n junction strategies fabricated between different semiconductors are generally used to promote the spatial charge separation in photocatalysis and solar cells,Expand
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Integrating Poly-Silicon and InGaZnO Thin-Film Transistors for CMOS Inverters
The applications of a-InGaZnO thin-film transistors (TFTs) to logic circuits have been limited owing to the intrinsic n-channel operation. In this paper, we demonstrated a hybrid inverter constructedExpand
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Antiferroelectric-to-Ferroelectric Switching in CH 3 NH 3 PbI 3 Perovskite and Its Potential Role in Effective Charge Separation in Perovskite Solar Cells
Charge recombination is a bugaboo of solar-cell efficiency, and much effort has been devoted to understanding and preventing it. There has been debate about whether the important hybridExpand
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Recent Advances in Nanomaterials-Based Electrochemical Biosensors for MicroRNAs Detection
1 College of Chemistry and Chemical Engineering, Pingdingshan University, Pingdingshan, Henan 467000, People's Republic of China 2 College of Chemistry and Chemical Engineering, Hunan Institute ofExpand
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A Full-swing Inverter Based on IGZO TFTs for Flexible Circuits
is well known that amorphous oxide semiconductors (AOS) are of high mobility and reliable stability, especially indium-gallium-zinc oxide (IGZO). It is the most promising material applied in theExpand
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Thin-Film Transistors With the Fringe Effect and the Correction Factor for Mobility Extraction
For field-effect transistors (FETs) and thin-film transistors (TFTs) with a conducting substrate as gate electrode, the classic Shockley equations are not suitable for directly calculating theExpand
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Flexible, active-matrix flat-panel image sensor for low dose X-ray detection enabled by integration of perovskite photodiode and oxide thin film transistor
Conventional image sensor pixel is based on amorphous silicon photodiode (PD) and amorphous silicon thin film transistor (TFT), which has complex fabrication process and low frame rate due to the lowExpand
Orders-of-magnitude enhancement in conductivity tuning in InGaZnO thin-film transistors via SiNx passivation and dual-gate modulation
The mobility of pristine amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is insufficient to meet the requirement of the future ultra-high-definition displays. ReportedExpand