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- Publications
- Influence
Homophase Junction for Promoting Spatial Charge Separation in Photocatalytic Water Splitting
The widespread heterojunction or p–n junction strategies fabricated between different semiconductors are generally used to promote the spatial charge separation in photocatalysis and solar cells,… Expand
Integrating Poly-Silicon and InGaZnO Thin-Film Transistors for CMOS Inverters
- Changdong Chen, B. Yang, +8 authors H. Shieh
- Materials Science
- IEEE Transactions on Electron Devices
- 3 August 2017
The applications of a-InGaZnO thin-film transistors (TFTs) to logic circuits have been limited owing to the intrinsic n-channel operation. In this paper, we demonstrated a hybrid inverter constructed… Expand
Antiferroelectric-to-Ferroelectric Switching in CH 3 NH 3 PbI 3 Perovskite and Its Potential Role in Effective Charge Separation in Perovskite Solar Cells
- Galhenage A. Sewvandi, Galhenage A. Sewvandi, +6 authors Qi Feng
- Materials Science
- 11 August 2016
Charge recombination is a bugaboo of solar-cell efficiency, and much effort has been devoted to understanding and preventing it. There has been debate about whether the important hybrid… Expand
A General Approach to Probe Dynamic Operation and Carrier Mobility in Field‐Effect Transistors with Nonuniform Accumulation
- Chuan Liu, Changdong Chen, +9 authors J. Chen
- Materials Science
- 1 July 2019
Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors
- Tengzhou Yang, Q. Wu, +9 authors Chuan Liu
- Materials Science
- 1 May 2020
Recent Advances in Nanomaterials-Based Electrochemical Biosensors for MicroRNAs Detection
- Changdong Chen
- Chemistry
- 1 June 2019
1 College of Chemistry and Chemical Engineering, Pingdingshan University, Pingdingshan, Henan 467000, People's Republic of China 2 College of Chemistry and Chemical Engineering, Hunan Institute of… Expand
A Full-swing Inverter Based on IGZO TFTs for Flexible Circuits
- J. Zheng, Z. Wang, Changdong Chen, M. Li, C. Liu
- Materials Science
- IEEE International Conference on Manipulation…
- 28 November 2018
is well known that amorphous oxide semiconductors (AOS) are of high mobility and reliable stability, especially indium-gallium-zinc oxide (IGZO). It is the most promising material applied in the… Expand
Thin-Film Transistors With the Fringe Effect and the Correction Factor for Mobility Extraction
- Changdong Chen, Z. Chen, +8 authors Chuan Liu
- Materials Science
- IEEE Electron Device Letters
- 12 April 2019
For field-effect transistors (FETs) and thin-film transistors (TFTs) with a conducting substrate as gate electrode, the classic Shockley equations are not suitable for directly calculating the… Expand
Flexible, active-matrix flat-panel image sensor for low dose X-ray detection enabled by integration of perovskite photodiode and oxide thin film transistor
- T. Zou, Changdong Chen, +4 authors Hang Zhou
- Materials Science
- IEEE International Electron Devices Meeting (IEDM…
- 1 December 2019
Conventional image sensor pixel is based on amorphous silicon photodiode (PD) and amorphous silicon thin film transistor (TFT), which has complex fabrication process and low frame rate due to the low… Expand
Orders-of-magnitude enhancement in conductivity tuning in InGaZnO thin-film transistors via SiNx passivation and dual-gate modulation
- Changdong Chen, Chenning Liu, +5 authors Chuan Liu
- Materials Science
- 3 July 2019
The mobility of pristine amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is insufficient to meet the requirement of the future ultra-high-definition displays. Reported… Expand