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Improving the efficiency of solar cells through novel materials and devices is critical to realize the full potential of solar energy to meet the growing worldwide energy demands. We present here a highly efficient radial p-n junction silicon solar cell using an asymmetric nanowire structure with a shorter bottom core diameter than at the top. A maximum(More)
We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through their high surface-to-volume ratio, which increases carrier-tunneling region with no(More)
In this paper, the characteristics of the silicon nanowire (SiNW) based solar cells and biologically modified field-effect transistor (BioFET) are presented and discussed. The pH responses of the BioFETs clearly showed a sensitivity of 40 mV/pH. Also, the lateral shifts of transfer I<sub>D</sub>-V<sub>G</sub> curves were observed, depending on the pH value(More)
In this paper, the C-V and I&#x2013;V characteristics of Si-nanowire FET are presented. From the C-V data, the effects of undoped floating channel on the Si-nanowire FET are analyzed. Also, the intrinsic channel capacitance and mobility therein are extracted accurately by eliminating the effect of parasitic capacitances. Moreover, the I&#x2013;V data free(More)
—The erase threshold-voltage (V T) distribution in Flash electrically erasable programmable read-only memory cells was investigated versus the tunnel oxide edge profiles in self-aligned shallow trench isolation (SA-STI) and self-aligned poly (SAP) cells. The capacitive coupling with offset voltage correction is transcribed into V T transient for simulating(More)
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