Chang-Hung Yu

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We evaluate and benchmark the performance of logic circuits and stability/performance of 6T SRAM cells using monolayer and bilayer TMD devices based on ITRS 2028 (5.9nm) technology node. For the performance benchmarking of logic circuits, the tradeoff between electrostatic integrity (monolayer favored) and carrier mobility (bilayer favored), and the issues(More)
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