Chang-Hoon Choi

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Experiment-based new phenomena, such as LIF energy and channel width effects in ultra-thin (T/sub Si/=700 /spl Aring/) 0.3 /spl mu/m SOI NMOSFETs, are analysed using TCAD tools. The relatively higher doping profile along with the width direction silicon edge can improve the breakdown characteristics (i.e., BV/spl cong/9 V at W/L=0.4 um/0.3 um). This effect,(More)
A new modeling methodology and an environment for abnormally structured MOS transistors we presented. This methodology uses a three-dimensional device simulator and a curve fitting method to characterize the current degradation effects by extracting the parasitic diffusion resistance from abnormal transistors. We have applied this methodology to 0.5 /spl(More)
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