Chan Wook Jang

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One of the interesing tunneling phenomena is negative differential resistance (NDR), the basic principle of resonant-tunneling diodes. NDR has been utilized in various semiconductor devices such as frequency multipliers, oscillators, relfection amplifiers, logic switches, and memories. The NDR in graphene has been also reported theoretically as well as(More)
Graphene quantum dots (GQDs) have received much attention due to their novel phenomena of charge transport and light absorption/emission. The optical transitions are known to be available up to ~6 eV in GQDs, especially useful for ultraviolet (UV) photodetectors (PDs). Thus, the demonstration of photodetection gain with GQDs would be the basis for a plenty(More)
Formation and characterization of graphene p-n junctions are of particular interest because the p-n junctions are used in a wide variety of electronic/photonic systems as building blocks. Graphene p-n junctions have been previously formed by using several techniques, but most of the studies are based on lateral-type p-n junctions, showing no rectification(More)
Intensive studies have recently been performed on graphene-based photodetectors, but most of them are based on field effect transistor structures containing mechanically exfoliated graphene, not suitable for practical large-scale device applications. Here we report high-efficient photodetector behaviours of chemical vapor deposition grown all-graphene p-n(More)
Graphene field-effect transistors (GFETs) were fabricated by photolithography and lift-off processes, and subsequently heated in a rapid-thermal-annealing (RTA) apparatus at temperatures (T(A)) from 200 to 400 °C for 10 min under nitrogen to eliminate the residues adsorbed on the graphene during the GFET fabrication processes. Raman-scattering,(More)
Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time. The photoresponse, very sensitive to variations in the size of the QDs as well as in the doping concentration of graphene and consistent with the quantum-confinement effect, is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si(More)
Förster resonance energy transfer (FRET), referred to as the transfer of the photon energy absorbed in donor to acceptor, has received much attention as an important physical phenomenon for its potential applications in optoelectronic devices as well as for the understanding of some biological systems. If one-atom-thick graphene is used for donor or(More)
Resonance effects in the thickness-dependent ultrafast carrier and phonon dynamics of topological insulator Bi2Se3 are found irrespective of the kind of substrate by measuring thickness-dependent abrupt changes of pump-probe differential-reflectivity signals (ΔR/R) from Bi2Se3 thin films on four different substrates of poly- and single-crystalline (sc-)(More)
We first employ highly-stable and -flexible (CF3SO2)2NH-doped graphene (TFSA/GR) and GR-encapsulated TFSA/GR (GR/TFSA/GR) transparent conductive electrodes (TCEs) prepared on polyethylene terephthalate substrates for flexible organic solar cells (OSCs). Compared to conventional indium tin oxide (ITO) TCEs, the TFSA-doped-GR TCEs show higher optical(More)
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