Chadong Yeo

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Highly cost effective and high speed 72M bit density S3 SRAM technology was successfully achieved for standalone memory and embedded memory with selective epitaxial growth of Si films, low thermal(More)
For the first time, the highest density SRAM, such as 512M bit SRAM, is developed by implementing the smallest 25F/sup 2/S/sup 3/ SRAM cell technology, whose cell size is 0.16/spl mu/m/sup 2/, and(More)
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