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Back-end-of-line integrated 1 &#x00D7; &#x03BC;m<sup>2</sup> TiN/HfO<sub>2</sub>/Ti/TiN MIM memory devices in a 0.25- &#x03BC;m complementary metal-oxide-semiconductor technology were built to investigate the conduction mechanism and the resistive switching behavior as a function of temperature. The temperature-dependent <i>I</i>- <i>V</i> characteristics(More)
This work reports the bipolar resistive switching behavior of more than 100 back-end-of-line (BEOL) integrated 600&#x00D7;600nm<sup>2</sup> TiN/HfO<sub>2</sub>/Ti/TiN MIM devices in a 4 kbit memory array. Reliable current-voltage switching characteristics were only observed for devices with a thickness ratio of 1 (10 nm HfO<sub>2</sub>/10nm Ti), indicating(More)
Bipolar resistive switching in TiN/HfO<sub>2</sub>/Ti/TiN devices using a CMOS technology process is demonstrated. The performance metrics include a retention time >10<sup>5</sup> s and a cycling endurance in dc sweep mode >10<sup>2</sup>. By controlling either the set current I<sub>set</sub> or by setting an appropriate stop voltage V<sub>stop</sub>, the(More)
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