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Journals and Conferences
An ultra-wideband 7-bit 5 Gsps analog-to-digital converter (ADC), fabricated in a 4-level interconnect, 0.8 um InP HBT technology, is presented. This monolithic ADC achieves 6 effective number of bits (ENoB) Nyquist performance at a sample rate of 5 Gsps. Furthermore, an ENoB performance of greater than 5.5 is maintained at analog input frequencies up to… (More)
The structure and fold of the enzyme responsible for the biosynthesis of the xenotransplantation antigen, namely pig alpha3 galactosyltransferase, has been studied by means of computational methods. Secondary structure predictions indicated that alpha3-galactosyltransferase and related protein family members, including blood group A and B transferases and… (More)
— Northrop Grumman Aerospace Systems (NGAS) has been developing InP-based heterojunction bipolar transistor technology for next generation high performance aerospace, defense and commercial applications. We present highlights and status of our production and advanced InP HBT technologies including ultra-high speed 0.25 micron emitter InP HBT.
This paper reports on two power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at frequencies around 220 GHz. The PAs use 250-nm InP HBTs and thin-film microstrip technology formed with a benzocyclobutene dielectric. Both PAs utilize a two-emitter-finger HBT unit-cell with each finger having an emitter area of 0.25×6… (More)
High indium content In 0.86 Al 0.
—Static frequency dividers are widely used technology performance benchmark circuits. Using a 0.25μm 530GHz f T / 600GHz+ f max InP DHBT process, a static frequency divider circuit has been designed, fabricated, and measured to operate up to 200.6GHz. The divide-by-2 core flip/flop dissipates 228mW.
Northrop Grumman Aerospace Systems (NGAS) under the Diverse Accessible Heterojunction Integration (DAHI) DARPA program is developing heterogeneous integration processes, process design kit (PDK) and thermal analysis tools to integrate deep submicron CMOS, Indium Phosphide (InP) heterojunction bipolar transistors (HBTs), Gallium Nitride (GaN) high electron… (More)
Fig. 1. AFM image from the surface of a In x Al 1-x As metamorphic buffer graded in three steps (grown on InP substrate) terminating with 86 % Indium. The scan area is 80 µm x 80 µm.