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An ultra-wideband 7-bit 5 Gsps analog-to-digital converter (ADC), fabricated in a 4-level interconnect, 0.8 um InP HBT technology, is presented. This monolithic ADC achieves 6 effective number of bits (ENoB) Nyquist performance at a sample rate of 5 Gsps. Furthermore, an ENoB performance of greater than 5.5 is maintained at analog input frequencies up to… (More)
— Northrop Grumman Aerospace Systems (NGAS) has been developing InP-based heterojunction bipolar transistor technology for next generation high performance aerospace, defense and commercial applications. We present highlights and status of our production and advanced InP HBT technologies including ultra-high speed 0.25 micron emitter InP HBT.
This paper reports on two power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at frequencies around 220 GHz. The PAs use 250-nm InP HBTs and thin-film microstrip technology formed with a benzocyclobutene dielectric. Both PAs utilize a two-emitter-finger HBT unit-cell with each finger having an emitter area of 0.25×6… (More)
High indium content In 0.86 Al 0.
—Static frequency dividers are widely used technology performance benchmark circuits. Using a 0.25μm 530GHz f T / 600GHz+ f max InP DHBT process, a static frequency divider circuit has been designed, fabricated, and measured to operate up to 200.6GHz. The divide-by-2 core flip/flop dissipates 228mW.
Northrop Grumman Aerospace Systems (NGAS) under the Diverse Accessible Heterojunction Integration (DAHI) DARPA program is developing heterogeneous integration processes, process design kit (PDK) and thermal analysis tools to integrate deep submicron CMOS, Indium Phosphide (InP) heterojunction bipolar transistors (HBTs), Gallium Nitride (GaN) high electron… (More)
The paper presents measurements of proton induced degradation in emerging low power high performance InAs based devices, including InAs/AlSb high electron mobility transistors (HEMT) and In<sub>0.86</sub>Ga<sub>0.14</sub>As base 6.0 Aring lattice constant double heterojunction bipolar transistor (DHBT) devices
We report the fabrication of double heterojunction bipolar transistors (DHBTs) with the use of a new quaternary InGaAsN material system that takes advantage of a low energy band gap in the base to reduce operating voltages in GaAs-based electronic devices. InGaP/In/sub 0.03/Ga/sub 0.97/As/sub 0.99/N/sub 0.01//GaAs DHBTs with improved band gap engineering at… (More)
—Static frequency dividers are widely used technology performance benchmark circuits. Using a 0.25 m 530 GHz /600 GHz+ max InP DHBT process, a static frequency divider circuit has been designed, fabricated, and measured to operate up to 200.6 GHz . The divide-by-two core flip-flop dissipates 228 mW. Techniques used for the divider design optimization and… (More)