Catherine H. Messick

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A new, physics based model for time dependent dielectric breakdown has been developed, and is presented along with test data obtained by NIST on oxides provided by National Semiconductor. Testing included fields from 5.6 MV/cm to 12.7 MV/cm, and temperatures ranging from 60/spl deg/C to 400/spl deg/C. The physics, mathematical model and test data, all(More)
Introduction. Chronically ill individuals with functional impairments require intensive ongoing primary care and community-based social services to continue to reside in the community. These individuals also frequently have exacerbations of illness requiring hospitalization, and coordination ofthese services over time across multiple agencies is a(More)
In this study time to breakdown distributions are compared for MOS gate oxides which were stressed with a constant voltage (or current) stress or a pre-stressing voltage (or current) ramp followed by a constant voltage (or current) stress. Results show clearly that a pre-stress can increase time to breakdown. This increase is discussed and it is shown that(More)
The standard method for characterizing the quality of thin oxide is to use charge to breakdown (QBD) either by JRAMP or VRAMP. In devices such as FLASH and EEPROM where bidirectional current injection through the thin tunneling oxide is a normal mode of operation, QBD does not correlate well with endurance. This study looks at the temperature and electric(More)
We present time-dependent dielectric breakdown (TDDB) characteristics for 9, 15, and 22 nm silicon dioxide films stressed under DC, unipolar, and bipolar pulsed bias conditions. Our results indicate that the increased lifetime observed under pulsed stress conditions diminishes as the stress electric field and oxide thickness are reduced. TDDB data under(More)
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