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Journals and Conferences
Metamorphic buffers ~M-buffers! consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors ~M-HEMTs!, while the bulk InP offers superior thermal properties for higher current… (More)
We consider a stochastic perturbation of a FitzHugh-Nagumo system. We show that it is possible to generate oscillations for values of parameters which do not allow oscillations for the deterministic system. We also study the appearance of a new equilibrium point and new bifurcation parameters due to the noisy component.
The production of InP-based epiwafers on GaAs substrates by molecular beam epitaxy is achieved through the use of metamorphic buffers (M-buffers) consisting of graded InAlAs or bulk InP layers. Each M-buffer demonstrates a unique surface morphology and strain relaxation mechanism, as demonstrated by AFM, SEM, and TEM. HEMTs and HBTs were grown on GaAs… (More)
A series of aryl alpha-ketocarboxylic acids was synthesized and investigated as inhibitors for the protein tyrosine phosphatase from Yersinia enterocolitica. IC(50) values for these compounds range from 79 to 2700 microM. Larger aromatic groups, and aromatic groups with high electron density, lead to more potent inhibitors. In general, the related aryl… (More)
This paper compares 3" and 4" SI InP substrates from multiple vendors in terms of their epi-ready quality for MBE growth, with a focus on surface morphology and on epilayer-substrate interface charge and buffer leakage.