Carlos Roberto Brys

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In this paper we present the results of RF and noise measurements on MESFETs transplanted by epitaxial lift off (ELO). ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and are subsequently re-attached to a new host substrate. [1,2]. Gate leakage current as well as noise and RF characteristics of MESFETs and(More)
1 De p a r t a me n t o d e I n f o r má t i c a , F a c u l t a d d e C i e n c i a s E c o n ó mi c a s , 3 De p a r t a me n t o d e I n f o r má t i c a , F a c u l t a d d e C i e n c i a s E x a c t a s y Na t u r a l e s y Ag r i me n s u r a , a me n t a l e s y d a a l o s c i u d a d a n o s u n a c c e s o i n t e g r a l p a r a e n c o n t r a(More)
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