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Journals and Conferences
The performance and threshold voltage variability of fully depleted silicon-on-insulator (FD-SOI) MOSFETs are compared against those of conventional bulk MOSFETs via 3-D device simulation with atomistic doping profiles. Compact (analytical) modeling is then used to estimate six-transistor SRAM cell performance metrics (i.e., read and write margins, and read… (More)
The parametric variations of FinFET in 22 nm due to doping concentrations are presented. In this paper different parameters of FinFET such as subthreshold slope, DIBL, threshold voltage, transconductance and Ioff are analysed using Synopsys Sentaurus 3D TCAD. From the results, it can be concluded that, optimized doping leads to better characteristics for… (More)
In this paper, we investigate the potential of strained Silicon-On-Insulator for the future advanced CMOS nodes. Strained FDSOI devices not only exhibit a 30% higher performance in term of I<sub>ON</sub>/I<sub>OFF</sub> but also show superior HC reliability at same drive current regardless of the back bias.