Carlos J. Bernal

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Measuring and quantifying reverse recovery parameters in high speed LDMOS devices is an important task in their characterization. A robust and automated procedure is required to achieve accurate and repeatable parameter quantification. This work focuses in the development of a virtual instrumentation setup to perform the reverse recovery parameter(More)
Measuring and quantifying reverse recovery parameters in high-speed LDMOS devices is an important task in their characterization. Multiple topologies have been proposed to quantify the revere recovery time, reverse recovery charge, and reverse peak current. Although such topologies have achieved different levels of performance, still they offer(More)
Reverse recovery parameter (RRP) characterization is a vital process in the modeling of LDMOS devices. This paper presents the validation of a RRP characterization setup to assess its adherence to the JEDEC JESD 24-10 standard when used on high-speed LDMOS devices. Circuit performance is exhaustively evaluated using both, packaged and wafer-level devices.(More)
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