Carl Schell

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Phase-change memory alloys based on germanium, antimony, and tellurium with SiO<sub>2</sub> nanophase dielectric inclusions are investigated for material and electrical properties. The new alloys are prepared by cosputtering with a SiO<sub>2</sub> target creating nanophase dielectric inclusions. The addition of the dielectric inclusions significantly(More)
Phase-change memory devices fabricated using MOCVD-deposited 30% Ge, 20% Sb, and 50% Te atomic composition, GST325 alloy, are fully characterized. In 100-nm-size test devices, a more than 2x reduction of reset current and set resistance were demonstrated compared with equivalent devices using PVD-deposited GST225. The devices show set speeds of 175-260 ns(More)
MOCVD (Metal-organic Chemical Vapor Deposition) has been investigated extensively to achieve smooth and conformal deposition of GST (GeSbTe) films. The studies are focused on filling confined cells as well as improving material properties for high performance PCM (Phase Change Memory) applications. Our MOCVD process allows GST alloys to fill 15nm hole(More)
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