Carl-Mikael Zetterling

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  • Kristina Buchholt, Per Eklund, +9 authors K. Buchholt
  • 2012
Epitaxial Ti3GeC2 thin films were deposited on 4° off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti3GeC2 films grow by lateral step-flow with {11 2 0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and(More)
Silicon Carbide (SiC) is a wide bandgap semiconductor now reaching maturity. Discrete high-voltage SiC devices are commercially available from several suppliers for low-loss power conversion. Future applications may include integrated circuits for high-temperature and radiation-hard applications. This paper introduces SiC material properties, processing,(More)
Silicon carbide is an excellent candidate when high temperature power electronics applications are considered. Integrated circuits as well as several power devices have been tested at high temperature. However, little attention has been paid to high temperature passive components that could enable the full SiC potential. In this work, the high-temperature(More)
Acknowledgements My deepest gratitude goes first and foremost to Professor Junyan Ren, my supervisor, for his constant encouragement, suggestion and guidance. Second, I would like to express my heartfelt thankfulness to Dr. Fan Ye, who led me into this exciting research area and helped me a lot in the past three years. and Shaofang Gong for traveling(More)
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