Carl Johan M. Asplund
Highly Influential Citations7
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Record-long emission wavelengths up to 1.3 /spl mu/m have recently been demonstrated from highly strained InGaAs-GaAs double-quantum-well (DQW) vertical-cavity surface-emitting lasers (VCSELs). The… Continue Reading
IRnova has been manufacturing mid wave infrared (MWIR) detectors based on InAs/GaSb type-II superlattices (T2SL) since 2014. Results from the first years of production of MWIR focal plane arrays… Continue Reading
We report on cross-sectional scanning tunneling microscopy studies of a quantum dot infrared photodetector structure consisting of multiple InGaAs quantum wells containing InAs quantum dots and… Continue Reading
Abstract In this paper, we present a range of modeling tools that are used in the design and performance evaluation of type-II superlattice detectors. Among these is an optical and photo carrier… Continue Reading
We report on the optical and structural integrity of metalorganic vapor-phase epitaxy-grown GaInNAs/GaAs single quantum wells on AlGaAs/GaAs distributed Bragg reflectors (DBRs). Photoluminescence and… Continue Reading
Vertical cavity lasers (VCLs) are of great interest aslow-cost, high-performance light sources for fiber-opticcommunication systems. They have a number of advantages overconventional edge-emitting ...
Interband and intersubband transitions of lateral InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetectors were studied in order to determine the origin of the photocurrent. The main… Continue Reading
Abstract A heterojunction T2SL barrier detector which effectively blocks majority carrier leakage over the pn-junction was designed and fabricated for the mid-wave infrared (MWIR) atmospheric… Continue Reading
We have studied n- and p-type doping-induced performance degradation of AlAs/GaAs distributed Bragg reflectors (DBRs) for applications in vertical cavity lasers (VCLs). Based on high-accuracy optical… Continue Reading
Abstract Type-II InAs/GaSb superlattice detectors and focal plane arrays (FPAs) with cut-off wavelength at 5.1 μm have been studied. For single pixel devices, dark current densities of 1 × 10 −6 … Continue Reading