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Journals and Conferences
Recently, organic-inorganic halide perovskite (OHP) has been suggested as an alternative to oxides or chalcogenides in resistive switching memory devices due to low operating voltage, high ON/OFF… (More)
As silicon-based metal oxide semiconductor field effect transistors get closer to their scaling limit, the importance of resistive random-access memory devices increases due to their low power… (More)
Correction for 'Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite' by Ja-Young Seo, et al., Nanoscale, 2017, DOI: 10.1039/c7nr05582j.