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A 14nm logic technology using 2 nd-generation FinFET transistors with a novel subfin doping technique, self-aligned double patterning (SADP) for critical patterning layers, and air-gapped interconnects at performance-critical layers is described. The transistors feature rectangular fins with 8nm fin width and 42nm fin height, 4 th generation high-k metal(More)
A 22nm generation logic technology is described incorporating fully-depleted tri-gate transistors for the first time. These transistors feature a 3 rd-generation high-k + metal-gate technology and a 5 th generation of channel strain techniques resulting in the highest drive currents yet reported for NMOS and PMOS. The use of tri-gate transistors provides(More)
Acknowledgements The authors would like to acknowledge the assistance provided by the members of the JNCC steering group over the course of this project. The authors would also like to thank the following organisations for the provision of data: Executive Summary The ecosystem services approach is a key element of planning for sustainable development. This(More)
A new bootstrap procedure for unit root testing based on the tapered block boot-strap is introduced. This procedure is similar to previous tests that were based on the block bootstrap and stationary bootstrap, but it has the advantage of the tapering procedure that has been previously shown to reduce the bias of the variance estimator by an order of(More)
– Intel Corporation is delivering myriad presentations, panel discussions and demonstrations at this year's VLSI Symposia. A highlight paper discloses new details about Intel's 22nm process – the industry's first fully depleted 3-D tri-Gate technology with superior low voltage and low power capabilities. Other Intel papers describe innovations in reducing(More)
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