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N The spectral characteristics of localized surface plasmons (LSPs) depend strongly on the geometry of the metal nanostructure sustaining them. [ 1 , 2 ] This fact makes the tuning of their lightharvesting and focusing abilities across the whole visible and infra-red regimes possible. Lately, the tailoring of the spectral width of LSP resonances through(More)
Low energy Ar ion sputtering, typically below 1,200 eV, of GaAs at normal beam incident angle is investigated. Surface morphology development with respect to varying energy is analyzed and discussed. Dot-like patterns in the nanometer scale are obtained above 600 eV. As the energy approaches upper eV range regular dots have evolved. The energy dependent dot(More)
Ten-layer InAs/In0.15Ga0.85As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 lm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 · 2,000 lm) delivered total output power of up(More)
In this work, we investigated the use of 10-layer InAs quantum dot (QD) as active region of an electroabsorption modulator (EAM). The QD-EAM is a p-i-n ridge waveguide structure with intrinsic layer thickness of 0.4 mum, width of 10 mum, and length of 1.0 mm. Photocurrent measurement reveals a Stark shift of ~5 meV (~7 nm) at reverse bias of 3 V (75 kV/cm)(More)
GaAs/AlGaAs quantum dots (QDs) are fabricated by low-energy ion beam sputtering and molecular beam epitaxy (MBE) re-growth. Temperature (6.5-78 K) and excitation power density (0.49-3.06 W cm(-2)) dependent photoluminescence (PL) are presented and discussed in detail. The low-temperature PL emission at 720 nm is attributed to GaAs QDs with height of ∼6.1 nm(More)
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