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  • Che Hao Chang, C. Y. Chou, Cheng Nan Han, Chaoying Peng, K. N. Chiang
  • Materials Science, Engineering
  • SPIE Micro + Nano Materials, Devices, and…
  • 2005 (First Publication: 28 December 2005)
  • The tensile strained Si, based on the lattice misfit between Si and SiGe, gives higher speed and higher drive current for the metal oxide silicon field effect transistors. Based on the strained SiContinue Reading