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Free-carrier absorption in n-type piezoelectric semiconductor films
Free-carrier absorption in n-type GaAs films has been investigated for the case where the free carriers are confined in a quasi-two-dimensional semiconducting structure with a non-parabolic energyExpand
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Impurity-limited mobility of semiconducting thin wires in n-type gallium arsenide
The impurity-limited mobility of semiconducting thin wires for the nonparabolic band structure of electrons in n-type gallium arsenide has been investigated by scattering from ionized impurities orExpand
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Magnetoacoustic effects of electrical conductivity tensors for nonellipsoidal nonparabolic band structure
Using time-independent perturbation theory, the energy eigenvalue equation for a free-electron gas in the presence of a dc magnetic field $\stackrel{\ensuremath{\rightarrow}}{B}$ is solved. TheExpand
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EFFECT OF NON-PARABOLICITY ON TRANSVERSE MAGNETORESISTANCE OF SEMICONDUCTORS IN STRONG MAGNETIC-FIELDS
The effect of nonparabolic band structure on the transverse magnetoresistance in a semiconductor such as ntype InSb in the presence of a dc magnetic field is studied taking into account theExpand
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Propagation of surface acoustic waves inn-type GaAs films
The effect of nonparabolicity on the amplification of surface acoustic waves in n-type GaAs films is investigated quantum mechanically in the GHz frequency region. Numerical results show that theExpand
Effect of velocity operator on acoustic-harmonic generation in n-type piezoelectric semiconductors
Using the velocity operator derived from the Heisenberg equation of motion, we have investigated second‐harmonic generation of acoustic waves propagating in nondegenerate piezoelectric semiconductorsExpand
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Effect of energy-band structures on transverse magnetoresistance of degenerate semiconductors in strong magnetic fields
The effect of energy-band structures on the transverse magnetoresistance in degenerate semiconductors has been studied for the case where acoustical phonons are the dominant scattering mechanism. TheExpand
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Effect of non-parabolic band structure on amplification of surface phonons in n-type InSb films?
The effect of non-parabolic band structure of surface phonons in n-type InSb films has been investigated quantum mechanically in the GHz frequency region. Numerical results show that theExpand
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Magnetoresistance effect of bismuth in a quantizing field
The magnetoresistance effect in bismuth has been studied at the very low temperature limit when the lattice scattering is dominant in solids. Results show that the magnetoresistance oscillates withExpand
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