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Design and characterization of a CMOS 3-D image sensor based on single photon avalanche diodes
The design and characterization of an imaging system is presented for depth information capture of arbitrary three-dimensional (3-D) objects. The core of the system is an array of 32 /spl times/ 32Expand
Single-photon image sensors in CMOS
Among advanced electronic designs, vision systems are perhaps those that have undergone the most dramatic technological revolutions of the last decades. Recently, a new family of vision systems hasExpand
A 100-m Range 10-Frame/s 340 $\,\times\, $96-Pixel Time-of-Flight Depth Sensor in 0.18-$\mu\hbox{m}$ CMOS
A single-photon detection technique for time-of-flight distance ranging based on the temporal and spatial correlation of photons is introduced and experimental results in which the depth sensor was operated in a typical traffic scenario are reported. Expand
A 128x128 Single-Photon Imager with on-Chip Column-Level 97ps 10bit Time-to-Digital-Converter Array
This poster presents a poster presenting a probabilistic procedure to characterize the response of the immune system to the presence of small particles in the fluid mechanics domain. Expand
A 0.18-$\mu$ m CMOS SoC for a 100-m-Range 10-Frame/s 200 $\,\times\,$96-Pixel Time-of-Flight Depth Sensor
A system-on-a-chip (SoC) that performs time-correlated single-photon counting and complete digital signal processing for a time-of-flight (TOF) sensor and provides the system-level electronics with a serial and low-bit-rate digital interface for multi-echo distance; distance reliability; 3) intensity; and 4) passive-only intensity, thus mitigating system- level complexity and cost. Expand
A low-noise single-photon detector implemented in a 130 nm CMOS imaging process
We report on a new single-photon avalanche diode (SPAD) fabricated in a 130 nm CMOS imaging process. A novel circular structure combining shallow trench isolation (STI) and a passivation implantExpand
A 128 $\times$ 128 Single-Photon Image Sensor With Column-Level 10-Bit Time-to-Digital Converter Array
To the best of the knowledge, this imager is the first fully integrated system for photon time-of-arrival evaluation and has enabled us to reconstruct 3-D scenes with milimetric precisions in extremely low signal exposure. Expand
A single photon avalanche diode array fabricated in 0.35-μm CMOS and based on an event-driven readout for TCSPC experiments
The design and characterization of an imaging sensor based on single photon avalanche diodes is presented. The sensor was fully integrated in a 0.35μm CMOS technology. The core of the imager is anExpand
A Single Photon Avalanche Diode Implemented in 130-nm CMOS Technology
We report on the first implementation of a single photon avalanche diode (SPAD) in 130 nm complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is fabricated as p+/n-well junction withExpand
Design and characterization of a 256 x 64-pixel single-photon imager in CMOS for a MEMS-based laser scanning time-of-flight sensor.
This paper focuses on the design and characterization of a 256 x 64-pixel image sensor, which also comprises an event-driven readout circuit, an array of 64 row-level high-throughput time-to-digital converters, and a 16 Gbit/s global read out circuit. Expand