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We propose a novel process whereby Antimony Assisted Arsenic Source/Drain Extension (A/sup 3/ SDE) is employed to realize a steep and retrograde indium pocket profile for sub-0.1 /spl mu/m nMOSFETs.(More)
'Institute of Public Health, National Taiwan University College of Medicine, Taipei 10018, and Institute of Biomedical Sciences, Academia Sinica, Taipei 11529, Taiwan, ROC; 2US Environmental(More)