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Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study
We demonstrate how by taking better account of electron correlations in the $3d$ shell of metal ions in nickel oxide it is possible to improve the description of both electron energy loss spectra and
Machine Learning Predicts Laboratory Earthquakes
We apply machine learning to data sets from shear laboratory experiments, with the goal of identifying hidden signals that precede earthquakes. Here we show that by listening to the acoustic signal
Dopant profiling with the scanning electron microscope—A study of Si
This article describes the results of a detailed study of semiconductor dopant profiling with the scanning electron microscope (SEM) using secondary electrons. The technique has been applied to a
Solid-State Lighting
Electricity generation is the main source of energy-related greenhouse gas emissions and lighting uses one-fifth of its output. Solid-state lighting using light-emitting diodes (LEDs) is poised to
Understanding x-ray diffraction of nonpolar gallium nitride films
X-ray diffraction (XRD) is widely used for the rapid evaluation of the structural quality of thin films. In order to determine how defect densities relate to XRD data, we investigated a series of
Prospects of III-nitride optoelectronics grown on Si.
TLDR
The status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed and a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures are outlined.
A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons
Abstract A many-beam dynamical theory, which apporoximately takes into account multiple inelastic scvattering, has been formulated and used to calculate the intensity of electrons backscattered from
The scattering of fast electrons by crystals
Electron diffraction and microscopy are among the most important techniques for studying the structures of solids. This review aims to give a comprehensive introduction to the basic principles of the
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
InGaN quantum wells have been found to be extremely sensitive to exposure to the electron beam in the transmission electron microscope (TEM). High-resolution TEM images acquired immediately after
Absorption parameters in electron diffraction theory
Abstract Values of the parameter Vg/Vg are calculated for 100 kv electrons as a function of the reflection vector g for different crystal temperatures and for a number of different materials. It is
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