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Avalanche behaviour and its temperature dependence of commercial SiC MPS diodes: Influence of design and voltage class
The avalanche behavior of 650V and 1200V SiC Merged-PN-Schottky diodes was investigated as function of temperature by means of electrical measurements, simulation and optical detection of theExpand
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Thick Epitaxial Layers on 4º Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kV
This work presents results on the growth of thick epitaxial layers on 4° off-oriented 4HSiC in a commercially available hot-wall CVD system. Results on background doping level, homogeneity ofExpand
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High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor
In this paper, we present first results of epitaxial layer deposition using a novel warm-wall CVD multi-wafer system AIX 2800G4 WW from AIXTRON with a capability of processing 10x100mm wafers perExpand
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Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition
Epitaxial layers have been grown on the (0001) C-face of 2- and 3-inch 4H-SiC wafers. Growth conditions like temperature, pressure, and C/Si ratio have been varied. In both systems smooth surfaceExpand
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Large-area production of solar absorbent multilayers by MF-pulsed plasma technology
Abstract Since solar absorbers ensure an extremely high efficiency in solar energy utilization, there is an increasing demand for high-quality, highly durable and cost-reasonable absorber units. TheExpand
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Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs
The rapid market development for SiC-devices during the last years can be attributed particularly to the success in supplying high-quality SiC wafers and corresponding epitaxial layers. The deviceExpand
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Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC
4H-SiC homoepitaxial layers with different thicknesses from 12.5 µm up to 50 µm were investigated by microwave-detected photoconductivity decay (µ-PCD), deep level transient spectroscopy (DLTS) andExpand
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