• Publications
  • Influence
CMOS Photonics for High-Speed Interconnects
  • C. Gunn
  • Materials Science, Computer Science
  • IEEE Micro
  • 1 March 2006
Luxtera has demonstrated the technology required to implement CMOS photonics, and product development is underway. It has also demonstrated all the technology required for 10-Gbps operation, inExpand
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  • 27
Electrically Tunable Ring Resonators Incorporating Nematic Liquid Crystals as Cladding Layers
We have demonstrated electrical tuning in ring resonators fabricated from silicon-on-insulator wafers by incorporating nematic liquid crystals (NLCs) as the waveguide top and side cladding material.Expand
  • 83
  • 4
A Four-Channel, 10 Gbps Monolithic Optical Receiver In 130nm CMOS With Integrated Ge Waveguide Photodetectors
we introduce the world's first multi-channel, high-speed optical receiver using Ge waveguide photodetectors monolithically integrated in the CMOS process. The integrated receivers achieves aExpand
  • 38
  • 4
Cost Analysis of Computer-Aided Endoscopic Sinus Surgery
Functional endoscopic sinus surgery (FESS) is a common otolaryngologic procedure, with over 250,000 operations performed annually. Computerized surgical navigation systems are available to assist theExpand
  • 30
  • 3
High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process
We discuss our approach to monolithic intergration of Ge photodectors with CMOS electronics for high-speed optical transceivers. Receivers based on Ge waveguide photodetectors achieve a sensitivityExpand
  • 61
  • 2
A 1550nm, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetector
This paper introduce the world's first, high-speed optical receiver using Ge waveguide photodetectors monolithically integrated in the CMOS process. The integrated receiver achieves a sensitivity ofExpand
  • 52
  • 1
A 10Gb/s photonic modulator and WDM MUX/DEMUX integrated with electronics in 0.13/spl mu/m SOI CMOS
Monolithic integration of both photonic and electronic components operating at 10Gb/s in a 0.13mum SOI CMOS process for PowerPC processors is presented. A modulator uses free carrier plasmaExpand
  • 29
  • 1
A Fully Integrated 4×10Gb/s DWDM Optoelectronic Transceiver in a standard 0.13/spl mu/m CMOS SOI
A 4-wavelength DWDM optoelectronic transceiver, implemented in a 0.13mum CMOS SOI process, achieves an aggregate rate of 40Gb/s transmission over single fiber. The four channel WDM chip, operatingExpand
  • 22
  • 1
High-speed, monolithic CMOS receivers at 1550nm with Ge on Si waveguide photodetectors
This talk discusses the technological challenges arising from the insertion of a Ge photodetectors step in a CMOS process and the advantages brought by monolithic integration.
  • 12
  • 1
10 Gb/s CMOS photonics technology
  • C. Gunn
  • Engineering, Materials Science
  • 9 February 2006
Freescale's production 0.13μm SOI process is used to fabricate all required electrical and optical components for 10Gb interconnect up to 2000m using only 1.7W. The optical transceiver cores areExpand
  • 12
  • 1