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Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer
Abstract We propose a novel resistive switching device with a W/CeO 2 /Si/TiN structure by incorporating a very thin Si buffer layer in the interface, the memory performance of this device such asExpand
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Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices
The electron transport in W/CeOx/SiO2/NiSi2 resistive switching devices fabricated onto a p+-type Si substrate is investigated. It is shown that the structures exhibit bipolar switching withExpand
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Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures
Abstract In this work, we have systematically studied the frequency dispersion of the capacitance–voltage (C–V) characteristics of In0.53Ga0.47As metal–oxide-semiconductor (MOS) capacitors inExpand
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Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps
This paper presents a detailed investigation of the temperature dependence of frequency dispersion observed in capacitance-voltage (C-V) measurements of III-V metal-oxide-semiconductor (MOS) devices.Expand
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Challenges of emerging memory and memristor based circuits: Nonvolatile logics, IoT security, deep learning and neuromorphic computing
Emerging nonvolatile memory (NVM) devices are not limited to build nonvolatile memory macros. They can also be used in developing nonvolatile logics (nvLogics) for nonvolatile processors, securityExpand
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Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device
We report the direct electrical measurement of multiple resistance steps in the ZrO2-based solid electrolyte nonvolatile memory device using the refined dc I-V method with a very small voltageExpand
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Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement
Abstract Adopting the gated p–i–n diode configuration, the interface state density ( D it ) at the Si/SiO 2 interface of Si fin structures on Silicon-on-Insulator (SOI) wafers has been systematicallyExpand
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Tetrahedral amorphous carbon resistive memories with graphene-based electrodes
Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistiveExpand
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  • Open Access
Joule heating effects in nanoscale carbon-based memory devices
One of the emerging candidates to bridge the gap between fast but volatile DRAM and non-volatile but slow storage devices is tetrahedral amorphous carbon (ta-C) based memory [1]-[3]. This offers aExpand
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  • Open Access
Hunting Phenomena Of Automotive Air Conditioning Systems With Variable Displacement Compressor
Automotive air conditioning (AAC) system with a variable displacement compressor (VDC) sometimes tends to experience hunting problems, where the system undergoes oscillation. The purpose of thisExpand
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