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- Publications
- Influence
The emergence of spin electronics in data storage.
- C. Chappert, A. Fert, Frédéric Nguyen Van Dau
- Medicine, Materials Science
- Nature materials
- 1 November 2007
Electrons have a charge and a spin, but until recently these were considered separately. In classical electronics, charges are moved by electric fields to transmit information and are stored in a… Expand
High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits
- W. Zhao, C. Chappert, V. Javerliac, J.-P. Noziere
- Physics
- IEEE Transactions on Magnetics
- 22 September 2009
Densely embedding Magnetic Tunnel Junctions (MTJ) in CMOS logic circuits is considered as one potentially powerful solution to bring non volatility, instant on/off and low standby power in today's… Expand
Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions
- Yue Zhang, W. Zhao, +4 authors C. Chappert
- Physics
- IEEE Transactions on Electron Devices
- 6 January 2012
Magnetic tunnel junctions (MTJs) composed of ferromagnetic layers with perpendicular magnetic anisotropy (PMA) are of great interest for achieving high-density nonvolatile memory and logic chips… Expand
Low Power Magnetic Full-Adder Based on Spin Transfer Torque MRAM
- E. Deng, Yue Zhang, Jacques-Olivier Klein, D. Ravelsona, C. Chappert, W. Zhao
- Physics
- IEEE Transactions on Magnetics
- 7 February 2013
Power issues have become a major problem of CMOS logic circuits as technology node shrinks below 90 nm. In order to overcome this limitation, emerging logic-in-memory architecture based on… Expand
DOMAIN WALL CREEP IN AN ISING ULTRATHIN MAGNETIC FILM
- S. Lemerle, J. Ferré, C. Chappert, V. Mathet, T. Giamarchi, P. L. Doussal
- Physics
- 26 January 1998
We have studied the motion of a magnetic domain wall (MDW) driven by a magnetic field H in a 2D ultrathin Pt/Co/Pt film showing perpendicular anisotropy and quenched disorder. MDW velocity… Expand
Magnetic Adder Based on Racetrack Memory
- Hong-Phuc Trinh, W. Zhao, Jacques-Olivier Klein, Yue Zhang, D. Ravelosona, C. Chappert
- Computer Science, Mathematics
- IEEE Transactions on Circuits and Systems I…
- 14 January 2013
The miniaturization of integrated circuits based on complementary metal oxide semiconductor (CMOS) technology meets a significant slowdown in this decade due to several technological and scientific… Expand
Spin transfer torque (STT)-MRAM--based runtime reconfiguration FPGA circuit
- W. Zhao, E. Belhaire, C. Chappert, P. Mazoyer
- Computer Science
- TECS
- 1 October 2009
As the minimum fabrication technology of CMOS transistor shrink down to 90nm or below, the high standby power has become one of the major critical issues for the SRAM-based FPGA circuit due to the… Expand
Hardening Techniques for MRAM-Based Nonvolatile Latches and Logic
- Y. Lakys, W. Zhao, Jacques-Olivier Klein, C. Chappert
- Physics
- IEEE Transactions on Nuclear Science
- 25 May 2012
Magnetic RAM (MRAM) is considered as a promising nonvolatile memory technology for aerospace and avionic electronics thanks to its intrinsic hardness to radiation. Data is stored on the spin… Expand
Failure and reliability analysis of STT-MRAM
- W. Zhao, Yue Zhang, +4 authors P. Mazoyer
- Computer Science, Engineering
- Microelectron. Reliab.
- 1 September 2012
Abstract Spin Transfer Torque Magnetic RAM (STT-MRAM) promises low power, great miniaturization prospective (e.g. 22 nm) and easy integration with CMOS process. It becomes actually a strong… Expand
Separated Precharge Sensing Amplifier for Deep Submicrometer MTJ/CMOS Hybrid Logic Circuits
Magnetic tunnel junction (MTJ) embedded in complementary metal-oxide-semiconductor (CMOS) has been considered as one of the potentially powerful solutions to build up nonvolatile memory and logic… Expand