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The emergence of spin electronics in data storage.
Electrons have a charge and a spin, but until recently these were considered separately. In classical electronics, charges are moved by electric fields to transmit information and are stored in aExpand
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High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits
In this paper, we propose a new sense amplifier circuit, called Pre-Charge Sense Amplifier (PCSA). Expand
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Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions
Magnetic tunnel junctions (MTJs) composed of ferromagnetic layers with perpendicular magnetic anisotropy (PMA) are of great interest for achieving high-density nonvolatile memory and logic chipsExpand
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Low Power Magnetic Full-Adder Based on Spin Transfer Torque MRAM
Power issues have become a major problem of CMOS logic circuits as technology node shrinks below 90 nm. In order to overcome this limitation, emerging logic-in-memory architecture based onExpand
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We have studied the motion of a magnetic domain wall (MDW) driven by a magnetic field H in a 2D ultrathin Pt/Co/Pt film showing perpendicular anisotropy and quenched disorder. MDW velocityExpand
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Magnetic Adder Based on Racetrack Memory
The miniaturization of integrated circuits based on complementary metal oxide semiconductor technology meets a significant slowdown in this decade due to several technological and scientific difficulties. Expand
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Spin transfer torque (STT)-MRAM--based runtime reconfiguration FPGA circuit
Spin transfer torque (STT)-based MRAM is then evaluated to address these issues, some design techniques and novel computing architecture for FPGA logic circuits based on STT-MRAM are presented in this article. Expand
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Failure and reliability analysis of STT-MRAM
This paper classifies firstly all the possible failures of STT-MRAM into “soft errors” and “hard errors“, and analyzes their impact on the memory reliability. Expand
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Hardening Techniques for MRAM-Based Nonvolatile Latches and Logic
Magnetic RAM (MRAM) is considered as a promising nonvolatile memory technology for aerospace and avionic electronics thanks to its intrinsic hardness to radiation. Data is stored on the spinExpand
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A radiation hardened hybrid spintronic/CMOS nonvolatile unit using magnetic tunnel junctions
Conventional complementary metal-oxide semiconductor (CMOS)-based devices are approaching their physical limits to continue the Moore's law. Spintronic devices that exploit the intrinsic spin freedomExpand
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