• Publications
  • Influence
The emergence of spin electronics in data storage.
Electrons have a charge and a spin, but until recently these were considered separately. In classical electronics, charges are moved by electric fields to transmit information and are stored in aExpand
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High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits
Densely embedding Magnetic Tunnel Junctions (MTJ) in CMOS logic circuits is considered as one potentially powerful solution to bring non volatility, instant on/off and low standby power in today'sExpand
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Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions
Magnetic tunnel junctions (MTJs) composed of ferromagnetic layers with perpendicular magnetic anisotropy (PMA) are of great interest for achieving high-density nonvolatile memory and logic chipsExpand
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Low Power Magnetic Full-Adder Based on Spin Transfer Torque MRAM
Power issues have become a major problem of CMOS logic circuits as technology node shrinks below 90 nm. In order to overcome this limitation, emerging logic-in-memory architecture based onExpand
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We have studied the motion of a magnetic domain wall (MDW) driven by a magnetic field H in a 2D ultrathin Pt/Co/Pt film showing perpendicular anisotropy and quenched disorder. MDW velocityExpand
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Magnetic Adder Based on Racetrack Memory
The miniaturization of integrated circuits based on complementary metal oxide semiconductor (CMOS) technology meets a significant slowdown in this decade due to several technological and scientificExpand
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Spin transfer torque (STT)-MRAM--based runtime reconfiguration FPGA circuit
As the minimum fabrication technology of CMOS transistor shrink down to 90nm or below, the high standby power has become one of the major critical issues for the SRAM-based FPGA circuit due to theExpand
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Hardening Techniques for MRAM-Based Nonvolatile Latches and Logic
Magnetic RAM (MRAM) is considered as a promising nonvolatile memory technology for aerospace and avionic electronics thanks to its intrinsic hardness to radiation. Data is stored on the spinExpand
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Failure and reliability analysis of STT-MRAM
Abstract Spin Transfer Torque Magnetic RAM (STT-MRAM) promises low power, great miniaturization prospective (e.g. 22 nm) and easy integration with CMOS process. It becomes actually a strongExpand
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Separated Precharge Sensing Amplifier for Deep Submicrometer MTJ/CMOS Hybrid Logic Circuits
Magnetic tunnel junction (MTJ) embedded in complementary metal-oxide-semiconductor (CMOS) has been considered as one of the potentially powerful solutions to build up nonvolatile memory and logicExpand
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