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- Publications
- Influence
The emergence of spin electronics in data storage.
- C. Chappert, A. Fert, Frédéric Nguyen Van Dau
- Materials Science, Medicine
- Nature materials
- 1 November 2007
Electrons have a charge and a spin, but until recently these were considered separately. In classical electronics, charges are moved by electric fields to transmit information and are stored in a… Expand
High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits
- W. Zhao, C. Chappert, V. Javerliac, J.-P. Noziere
- Computer Science
- IEEE Transactions on Magnetics
- 22 September 2009
TLDR
Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions
- Yue Zhang, W. Zhao, +4 authors C. Chappert
- Materials Science
- IEEE Transactions on Electron Devices
- 6 January 2012
Magnetic tunnel junctions (MTJs) composed of ferromagnetic layers with perpendicular magnetic anisotropy (PMA) are of great interest for achieving high-density nonvolatile memory and logic chips… Expand
Low Power Magnetic Full-Adder Based on Spin Transfer Torque MRAM
- E. Deng, Yue Zhang, Jacques-Olivier Klein, D. Ravelsona, C. Chappert, W. Zhao
- Physics
- IEEE Transactions on Magnetics
- 7 February 2013
Power issues have become a major problem of CMOS logic circuits as technology node shrinks below 90 nm. In order to overcome this limitation, emerging logic-in-memory architecture based on… Expand
DOMAIN WALL CREEP IN AN ISING ULTRATHIN MAGNETIC FILM
- S. Lemerle, J. Ferré, C. Chappert, V. Mathet, T. Giamarchi, P. L. Doussal
- Physics
- 26 January 1998
We have studied the motion of a magnetic domain wall (MDW) driven by a magnetic field H in a 2D ultrathin Pt/Co/Pt film showing perpendicular anisotropy and quenched disorder. MDW velocity… Expand
Magnetic Adder Based on Racetrack Memory
- Hong-Phuc Trinh, W. Zhao, Jacques-Olivier Klein, Yue Zhang, D. Ravelosona, C. Chappert
- Engineering, Computer Science
- IEEE Transactions on Circuits and Systems I…
- 14 January 2013
TLDR
Spin transfer torque (STT)-MRAM--based runtime reconfiguration FPGA circuit
- W. Zhao, E. Belhaire, C. Chappert, P. Mazoyer
- Computer Science
- TECS
- 1 October 2009
TLDR
Failure and reliability analysis of STT-MRAM
- W. Zhao, Yue Zhang, +4 authors P. Mazoyer
- Engineering, Computer Science
- Microelectron. Reliab.
- 1 September 2012
TLDR
Hardening Techniques for MRAM-Based Nonvolatile Latches and Logic
- Y. Lakys, W. Zhao, Jacques-Olivier Klein, C. Chappert
- Physics
- IEEE Transactions on Nuclear Science
- 25 May 2012
Magnetic RAM (MRAM) is considered as a promising nonvolatile memory technology for aerospace and avionic electronics thanks to its intrinsic hardness to radiation. Data is stored on the spin… Expand
A radiation hardened hybrid spintronic/CMOS nonvolatile unit using magnetic tunnel junctions
- Wang Kang, Wang Kang, +7 authors C. Chappert
- 5 September 2014
Conventional complementary metal-oxide semiconductor (CMOS)-based devices are approaching their physical limits to continue the Moore's law. Spintronic devices that exploit the intrinsic spin freedom… Expand