C. Chappert

Publications
Influence

The emergence of spin electronics in data storage.

C. Chappert, A. Fert, Frédéric Nguyen Van Dau
Materials Science, Medicine
Nature materials
1 November 2007

Electrons have a charge and a spin, but until recently these were considered separately. In classical electronics, charges are moved by electric fields to transmit information and are stored in a… Expand

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High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits

W. Zhao, C. Chappert, V. Javerliac, J.-P. Noziere
Computer Science
IEEE Transactions on Magnetics
22 September 2009

In this paper, we propose a new sense amplifier circuit, called Pre-Charge Sense Amplifier (PCSA). Expand

Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions

Yue Zhang, W. Zhao, +4 authors C. Chappert
Materials Science
IEEE Transactions on Electron Devices
6 January 2012

Magnetic tunnel junctions (MTJs) composed of ferromagnetic layers with perpendicular magnetic anisotropy (PMA) are of great interest for achieving high-density nonvolatile memory and logic chips… Expand

Low Power Magnetic Full-Adder Based on Spin Transfer Torque MRAM

E. Deng, Yue Zhang, Jacques-Olivier Klein, D. Ravelsona, C. Chappert, W. Zhao
Physics
IEEE Transactions on Magnetics
7 February 2013

Power issues have become a major problem of CMOS logic circuits as technology node shrinks below 90 nm. In order to overcome this limitation, emerging logic-in-memory architecture based on… Expand

DOMAIN WALL CREEP IN AN ISING ULTRATHIN MAGNETIC FILM

S. Lemerle, J. Ferré, C. Chappert, V. Mathet, T. Giamarchi, P. L. Doussal
Physics
26 January 1998

We have studied the motion of a magnetic domain wall (MDW) driven by a magnetic field H in a 2D ultrathin Pt/Co/Pt film showing perpendicular anisotropy and quenched disorder. MDW velocity… Expand

Magnetic Adder Based on Racetrack Memory

Hong-Phuc Trinh, W. Zhao, Jacques-Olivier Klein, Yue Zhang, D. Ravelosona, C. Chappert
Engineering, Computer Science
IEEE Transactions on Circuits and Systems I…
14 January 2013

The miniaturization of integrated circuits based on complementary metal oxide semiconductor technology meets a significant slowdown in this decade due to several technological and scientific difficulties. Expand

Spin transfer torque (STT)-MRAM--based runtime reconfiguration FPGA circuit

W. Zhao, E. Belhaire, C. Chappert, P. Mazoyer
Computer Science
TECS
1 October 2009

Spin transfer torque (STT)-based MRAM is then evaluated to address these issues, some design techniques and novel computing architecture for FPGA logic circuits based on STT-MRAM are presented in this article. Expand

Failure and reliability analysis of STT-MRAM

W. Zhao, Yue Zhang, +4 authors P. Mazoyer
Engineering, Computer Science
Microelectron. Reliab.
1 September 2012

This paper classifies firstly all the possible failures of STT-MRAM into “soft errors” and “hard errors“, and analyzes their impact on the memory reliability. Expand

Hardening Techniques for MRAM-Based Nonvolatile Latches and Logic

Y. Lakys, W. Zhao, Jacques-Olivier Klein, C. Chappert
Physics
IEEE Transactions on Nuclear Science
25 May 2012

Magnetic RAM (MRAM) is considered as a promising nonvolatile memory technology for aerospace and avionic electronics thanks to its intrinsic hardness to radiation. Data is stored on the spin… Expand

A radiation hardened hybrid spintronic/CMOS nonvolatile unit using magnetic tunnel junctions

Wang Kang, Wang Kang, +7 authors C. Chappert
5 September 2014

Conventional complementary metal-oxide semiconductor (CMOS)-based devices are approaching their physical limits to continue the Moore's law. Spintronic devices that exploit the intrinsic spin freedom… Expand

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