C.-W. Cheng

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This review focuses on material challenges associated with III-V co-integration with Si for future CMOS. There is a huge volume of literature on this topic as implementation of III-V monolithic integration with Si has been the holy grail for last four decades; targeting a wide range of applications including RF devices, LEDs, lasers, photo-detectors and the(More)
Indium Gallium Nitride (InGaN) based PV have the best fit to the solar spectrum of any alloy system and emerging LED lighting based on InGaN technology and has the potential to reduce energy consumption by nearly one half while enabling significant carbon emission reduction. However, getting the maximum benefit from GaN diode-based PV and LEDs will require(More)
Conventional flash memories may reach fundamental scaling limits [1] because of the minimum tunnel oxide thickness and poor charge retention due to defects in the tunneling oxide, necessitating new approaches to meet the scaling requirements while simultaneously meeting the reliability and performance requirements of future products. In this study we(More)
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