C.-W. Cheng

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Proliferation, cell cycle, total amount of DNA, area of cell nucleus, as well as epidermal growth factor receptors (EGFR) and expression of oncogene C-erbB2 mRNA of Chinese breast cancer cell line (BCaP-37) after being treated with kappa-selenocarrageenan were determined by cell culture technique, image cytometry (ICM) and northern blot to explore its(More)
Tumor recurrence and metastasis result in an unfavorable prognosis for cancer patients. Recent studies have suggested that specific microRNAs (miRNAs) may play important roles in the development of cancer cells. However, prognostic markers and the outcome prediction of the miRNA signature in breast cancer patients have not been comprehensively assessed. The(More)
Indium Gallium Nitride (InGaN) based PV have the best fit to the solar spectrum of any alloy system and emerging LED lighting based on InGaN technology and has the potential to reduce energy consumption by nearly one half while enabling significant carbon emission reduction. However, getting the maximum benefit from GaN diode-based PV and LEDs will require(More)
This review focuses on material challenges associated with III-V co-integration with Si for future CMOS. There is a huge volume of literature on this topic as implementation of III-V monolithic integration with Si has been the holy grail for last four decades; targeting a wide range of applications including RF devices, LEDs, lasers, photo-detectors and the(More)
Conventional flash memories may reach fundamental scaling limits [1] because of the minimum tunnel oxide thickness and poor charge retention due to defects in the tunneling oxide, necessitating new approaches to meet the scaling requirements while simultaneously meeting the reliability and performance requirements of future products. In this study we(More)
Gallium Nitride (GaN) is a unique material system that has been heavily exploited for photonic devices thanks to ultraviolet-to-terahertz spectral tunability. However, without a cost effective approach, GaN technology is limited to laboratory demonstrations and niche applications. In this investigation, integration of GaN on Silicon (100) substrates is(More)
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