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  • C. Magee
  • Extended Abstracts of the Third International…
  • 2002
This work illustrates how SIMS can be used in materials and processes that are in use today's high-speed Si devices such as 2 nm thick SiON gate dielectric films, SiGe graded-base heterostructure bipolar transistors and ultra-low energy ion implantation. Examples will also be shown that illustrate the capability of SIMS to characterize new materials such as(More)
We have investigated novel techniques for the fabrication of silicon IMPATTdiodes for use at frequencies of up to 300 GHz. The basic techniques described are ion implantation, laser annealing, transmission electron microscopy (TEM), unique secondary ion mass spectrometry (SIMS - profile diagnostics), and novel wafer thinning. These techniques yield ultra(More)
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