• Citations Per Year
Learn More
We report on the performances of 0.1-μm gate length InAl(Ga)N/GaN HEMT devices on SiC substrate. Measurements results of DC, pulsed I-V, S-parameters and load-pull power performances are presented. Devices exhibited a maximum DC transconductance of 400mS/mm and drain current of 1.2A/mm at Vgs=1V. Cut-off frequencies Ft and Fmag of 60GHz and 140 GHz(More)
We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm2 ̈ V ́1 ̈ s ́1 combined with a sheet carrier density of 1.93 ˆ 1013 cm ́2 leading to a remarkably low sheet(More)
  • 1