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This article presents a simple method for constructing a singleton fuzzy model from a given set of input output data. The tnethod consists of three computational steps: the initial phase, the growth phase, and the optional refining phase. The universe of discourse and two linguistic terms for each input variable and a rule base arc established during the(More)
The buffer is grown by molecular beam epitaxy (MBE) at low substrate temperatures (150-300 degrees C) using Ga and As/sub 4/ beam fluxes. It is highly resistive, optically inactive, and crystalline, and high-quality GaAs active layers can be grown on top of the buffer. MESFETs fabricated in active layers grown on top of this new buffer show improved output(More)
In this paper, we present a flexible parylene-C shadow mask technology for creating microscale patterns on flat and curved surfaces. The smallest feature size of 4 mum is demonstrated and the technology is scalable up to full wafer size. With the addition of SU-8 pillars, we also demonstrate multi mask processing with an alignment accuracy of about 5-6 mum.(More)
GaAs MESFETs were fabricated using a low-temperature-grown (LTG) high-resistivity GaAs layer to passivate the doped channel between the gate and source and between the gate and the drain. The gate was fabricated such that the source and drain edges of the metal gate overlapped the LTG GaAs passivation layer. The electric fields at the edges of the gate were(More)
A GaAs layer grown by molecular beam epitaxy at 200 degrees C is used as the gate insulator for GaAs MISFETs. The gate reverse breakdown and forward turn-on voltages, are improved substantially by using the high-resistivity GaAs layer between the gate metal and the conducting channel. It is shown that a reverse bias of 42 V or forward bias of 9,3 V is(More)
Single-Walled Carbon Nanotubes (SWNTs) are reported to be very sensitive to numerous odors and could serve as the next generation of miniature gas sensors. Recently, we have shown that SWNTs functionalized with DNA hold even greater promise than bare SWNTs as high sensitivity gas sensors. The DNA-decorated SWNT gas sensors were integrated on CMOS circuitry(More)