C.-K. Zetterling

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Silicon carbide NPN bipolar junction transistors were fabricated and a current gain exceeding 60 was obtained for a BJT with a breakdown voltage BV<sub>CEO</sub>=1100 V. A reduction of the current gain was observed after contact annealing at 950 degC and this was attributed to degradation of the oxide passivation. Device simulations with varying emitter(More)
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