C. K. Maiti

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Hot carrier reliability of a nanowire Omega-FinFET is investigated for the first time. Hot holes injected into the gate oxide via hot-carrier injection (HCI) at the silicon (Si) - silicon dioxide (SiO<sub>2</sub>) interface of Omega-FinFETs results in the formation of dangling silicon bonds due to the breaking of silicon-hydrogen bonds and lead to high(More)
Reliability characteristics of TaAlO<inf>x</inf> high-k dielectric MIM capacitors are reported. TaAlO<inf>x</inf> films have been deposited by RF co-sputtering of Ta<inf>2</inf>O<inf>5</inf> and Al<inf>2</inf>O<inf>3</inf> targets at a low substrate temperature. A high capacitance density and a low value of VCC (voltage coefficients of capacitance) have(More)
High quality surface passivation on bulk-GaAs substrates and epitaxial-GaAs/Ge (epi-GaAs) layers were achieved by using atomic layer deposited (ALD) titanium aluminum oxide (TiAlO) alloy dielectric. The TiAlO alloy dielectric suppresses the formation of defective native oxide on GaAs layers. X-ray photoelectron spectroscopy (XPS) analysis shows interfacial(More)
Some of the fundamental problems of ultra-small MOSFETs beyond sub-10nm channel length are the electrostatic limits, source-to-drain tunnelling, carrier mobility degradation, process variations, and static leakage. The trend toward ultra-short gate length MOSFETs re‐ quires a more and more effective control of the channel by the gate leading to new device(More)
Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon substrates have been investigated. ZnO/Si substrates are characterized by Rutherford backscattering (RBS), X-ray diffraction (XRD), Fourier transform infrared (FTIR), and X-ray photoelectron spectroscopy (XPS). ZrO 2 thin films have been deposited on ZnO(More)
With rapid downscaling of conventional MOSFETs, alternative device architectures are essential. Post-planar non-classical FinFET structures are becoming a popular choice for their reduced short channel effects, electrostatic integrity as well as superior RF performance. Noise is a fundamental problem for RF circuit design. In this work, to understand RF(More)