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The purpose of this review article is to report on the recent developments and the performance level achieved in the strained-Si/SiGe material system. In the first part, the technology of the growth of a high-quality strained-Si layer on a relaxed, linear or step-graded SiGe buffer layer is reviewed. Characterization results of strained-Si films obtained… (More)
Reliability characteristics of TaAlO<inf>x</inf> high-k dielectric MIM capacitors are reported. TaAlO<inf>x</inf> films have been deposited by RF co-sputtering of Ta<inf>2</inf>O<inf>5</inf> and Al<inf>2</inf>O<inf>3</inf> targets at a low substrate temperature. A high capacitance density and a low value of VCC (voltage coefficients of capacitance) have… (More)
Hot carrier reliability of a nanowire Omega-FinFET is investigated for the first time. Hot holes injected into the gate oxide via hot-carrier injection (HCI) at the silicon (Si) - silicon dioxide (SiO<sub>2</sub>) interface of Omega-FinFETs results in the formation of dangling silicon bonds due to the breaking of silicon-hydrogen bonds and lead to high… (More)
Negative Bias Temperature Instability (NBTI) of p-MOSFET parameters (threshold voltage, linear and saturation drain current, gate-drain capacitance, etc.) is becoming a serious reliability concern for digital and analog CMOS circuits. To maintain the current scaling trends, the understanding of the fundamental physics of failure mechanisms in p-MOSFETs is… (More)
Drain-induced barrier lowering in substrate-induced strained-Si n-MOSFETs has been investigated. The variation of subthreshold swing as a function of both the gate length and gate to source voltage has also been examined.
Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon substrates have been investigated. ZnO/Si substrates are characterized by Rutherford backscat-tering (RBS), X-ray diffraction (XRD), Fourier transform infrared (FTIR), and X-ray photoelectron spectro-scopy (XPS). ZrO 2 thin films have been deposited on… (More)