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Reliability characteristics of TaAlO<inf>x</inf> high-k dielectric MIM capacitors are reported. TaAlO<inf>x</inf> films have been deposited by RF co-sputtering of Ta<inf>2</inf>O<inf>5</inf> and Al<inf>2</inf>O<inf>3</inf> targets at a low substrate temperature. A high capacitance density and a low value of VCC (voltage coefficients of capacitance) have(More)
Hot carrier reliability of a nanowire Omega-FinFET is investigated for the first time. Hot holes injected into the gate oxide via hot-carrier injection (HCI) at the silicon (Si) - silicon dioxide (SiO<sub>2</sub>) interface of Omega-FinFETs results in the formation of dangling silicon bonds due to the breaking of silicon-hydrogen bonds and lead to high(More)
Negative Bias Temperature Instability (NBTI) of p-MOSFET parameters (threshold voltage, linear and saturation drain current, gate-drain capacitance, etc.) is becoming a serious reliability concern for digital and analog CMOS circuits. To maintain the current scaling trends, the understanding of the fundamental physics of failure mechanisms in p-MOSFETs is(More)
Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon substrates have been investigated. ZnO/Si substrates are characterized by Rutherford backscat-tering (RBS), X-ray diffraction (XRD), Fourier transform infrared (FTIR), and X-ray photoelectron spectro-scopy (XPS). ZrO 2 thin films have been deposited on(More)