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Three different types of surface, silicon dioxide (SiO2), silicon nitride (Si3N4), and titanium oxynitride (TiON) were modified for lactate dehydrogenase (LDH) immobilization using (3-aminopropyl)triethoxysilane (APTES) to obtain an amino layer on each surface. The APTES modified surfaces can directly react with LDH via physical attachment. LDH can be(More)
This paper presents the characteristics of silicon thin film thermistors. The polycrystalline silicon and amorphous silicon films were deposited by low pressure chemical vapor deposition (LPCVD) to serve as thermistors. We have studied the effects of temperature on thermistor with various boron implantation doses from 1.0times10<sup>16</sup> to(More)
This innovative pH-ISFET sensor used nanocrystalline-AlN thin film as ion-sensitive membrane which prepared by reactive gas-timing r.f. magnetron sputtering without heating substrate and post annealing. The technique of gas-timing r.f. magnetron sputtering purposed by us, the feeding gas is on-off controlled periodically in such a way that the deposited(More)
This paper presents the effect of base width and implantation dose on electrical carriers in the magnetotransistor deflected by the Lorentz force (FL) from magnetic field. The structure of magnetotransistor is designed like a structure of a PNP bipolar junction transistor which comprises of 3 terminals, i.e., emitter, collector and base. The base width (L)(More)
Superhydrophobic surface can be fabricated by creating a rough surface at very fine scale and modify it with low-surface energy material. To obtain the optimum superhydrophobicity, the surface roughness must be maximized. To avoid the limitation of scaling down the pattern size by using an expensive lithography tools, the surface roughness factor (r) was(More)
Needle-shaped pillars so-called "Black silicon" (B-Si) were fabricated by etching cleaned silicon wafer with fluorine-based deep reactive ion etching plasma. The B-Si pillar with the pillar size (a) and spacing (b) of 250 nm, and height (h) of 6.47 microm, coated with SiOxFy film had water contact angle (WCA) and ethylene glycol contact angle (ECA) of 159.8(More)
The patterning the contact holes by photolithography process, in this case polysilicon contacts, is the process to produce electrical connection between metal layer and polysilicon gates or metal layer and source/drain. The photolithography process can control size and shape of the contact hole patterns on photoresist before permanently patterned by etching(More)