C. F. McConville

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The valence-band density of states of single-crystalline rock-salt CdO͑001͒, wurtzite c-plane ZnO, and rock-salt MgO͑001͒ are investigated by high-resolution x-ray photoemission spectroscopy. A classic two-peak structure is observed in the VB-DOS due to the anion 2p-dominated valence bands. Good agreement is found between the experimental results and(More)
We present ab-initio calculations of excited-state properties within single-particle and two-particle approaches in comparison with corresponding experimental results. For the theoretical treatment of the electronic structure, we compute eigenvalues and eigenfunctions by using a spatially nonlocal exchange-correlation potential. From this starting point,(More)
The electronic structure of well-ordered single-crystal thin films of CdO͑100͒ has been studied using angle-resolved photoemission spectroscopy. Quantized electron subbands are observed above the valence-band maximum. The existence of these states provides evidence of an intrinsic electron accumulation space-charge layer near the CdO surface, an(More)
Photoluminescence ͑PL͒ has been observed from dilute InN x As 1−x epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap reduction with increasing N content. The variation of the PL spectra with temperature is indicative of carrier detrapping from localized to extended states as the temperature is increased. The redshift of(More)
Fourier transform infrared absorption measurements are presented from the dilute nitride semiconductor GaNSb with nitrogen incorporations between 0.2% and 1.0%. The divergence of transitions from the valence band to E − and E + can be seen with increasing nitrogen incorporation, consistent with theoretical predictions. The GaNSb band structure has been(More)
The structural and optoelectronic properties in GaN x Sb 1−x alloys ͑0 ഛ x Ͻ 0.02͒ grown by molecular-beam epitaxy on both GaSb substrates and AlSb buffer layers on GaAs substrates are investigated. High-resolution x-ray diffraction ͑XRD͒ and reciprocal space mapping indicate that the GaN x Sb 1−x epilayers are of high crystalline quality and the alloy(More)
Physiochemical interactions which occur at the surfaces of oxide materials can significantly impair their performance in many device applications. As a result, surface passivation of oxide materials has been attempted via several deposition methods and with a number of different inert materials. Here, we demonstrate a novel approach to passivate the surface(More)
Copyright and reuse: The Warwick Research Archive Portal (WRAP) makes this work of researchers of the University of Warwick available open access under the following conditions. This article is made available under the Creative Commons Attribution 4.0 International license (CC BY 4.0) and may be reused according to the conditions of the license. For more(More)
Bulk crystals and thin films of PbTi(1-x)FexO3(-δ) (PTFO) are multiferroic, exhibiting ferroelectricity and ferromagnetism at room temperature. Here we report that the Ruddlesden-Popper phase Pbn+1(Ti(1-x)Fex)nO3(n+1)-δ forms spontaneously during pulsed laser deposition of PTFO on LaAlO3 substrates. High-resolution transmission electron microscopy, x-ray(More)