C. F. McConville

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The valence-band density of states of single-crystalline rock-salt CdO͑001͒, wurtzite c-plane ZnO, and rock-salt MgO͑001͒ are investigated by high-resolution x-ray photoemission spectroscopy. A classic two-peak structure is observed in the VB-DOS due to the anion 2p-dominated valence bands. Good agreement is found between the experimental results and(More)
We present ab-initio calculations of excited-state properties within single-particle and two-particle approaches in comparison with corresponding experimental results. For the theoretical treatment of the electronic structure, we compute eigenvalues and eigenfunctions by using a spatially nonlocal exchange-correlation potential. From this starting point,(More)
Photoluminescence ͑PL͒ has been observed from dilute InN x As 1−x epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap reduction with increasing N content. The variation of the PL spectra with temperature is indicative of carrier detrapping from localized to extended states as the temperature is increased. The redshift of(More)
The electronic structure of well-ordered single-crystal thin films of CdO͑100͒ has been studied using angle-resolved photoemission spectroscopy. Quantized electron subbands are observed above the valence-band maximum. The existence of these states provides evidence of an intrinsic electron accumulation space-charge layer near the CdO surface, an(More)
Fourier transform infrared absorption measurements are presented from the dilute nitride semiconductor GaNSb with nitrogen incorporations between 0.2% and 1.0%. The divergence of transitions from the valence band to E − and E + can be seen with increasing nitrogen incorporation, consistent with theoretical predictions. The GaNSb band structure has been(More)
The structural and optoelectronic properties in GaN x Sb 1−x alloys ͑0 ഛ x Ͻ 0.02͒ grown by molecular-beam epitaxy on both GaSb substrates and AlSb buffer layers on GaAs substrates are investigated. High-resolution x-ray diffraction ͑XRD͒ and reciprocal space mapping indicate that the GaN x Sb 1−x epilayers are of high crystalline quality and the alloy(More)
In order to facilitate the development of next-generation display devices or modern solar cells, material performance is critically important. A combination of high transparency in the optical spectral range and high electrical conductivity under ambient conditions is attractive, if not crucial, for many applications. While the doping-induced presence of(More)
Copyright and reuse: The Warwick Research Archive Portal (WRAP) makes this work of researchers of the University of Warwick available open access under the following conditions. This article is made available under the Creative Commons Attribution 4.0 International license (CC BY 4.0) and may be reused according to the conditions of the license. For more(More)