C. Chuang

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We reported on a two-dimensional simulation of electrical properties of the radio frequency ͑rf͒ sputter amorphous In–Ga–Zn–O ͑a-IGZO͒ thin-film transistors ͑TFTs͒. The a-IGZO TFT used in this work has the following performance: field-effect mobility ͑␮ eff ͒ of ϳ12 cm 2 / V s, threshold voltage ͑V th ͒ of ϳ1.15 V, subthreshold swing ͑S͒ of ϳ0.13 V / dec,(More)
|This paper presents a detailed study on the impact of oating body in partially-depleted (PD) SOI MOS-FET on various digital VLSI CMOS circuit families. The parasitic bipolar eect resulting from the oating body is shown to degrade the circuit noise margin and stability i n general. In certain dynamic circuits and wide multiplex-ers, the parasitic bipolar(More)
We study the amorphous In-Ga-Zn-O thin-film transistors (TFTs) properties under monochromatic illumination (λ=420nm) with different intensity. TFT off-state drain current (I DS_off) was found to increase with the light intensity while field effect mobility (μ eff) is almost unchanged; only small change was observed for sub-threshold swing (S). Due to(More)
W (AM) flat panel displays (F F e studied the optical and electrical properties of the amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). To develop a-IGZO density-of-states model, intrinsic a-IGZO optical properties such as optical band gap and Urbach energy, and TFT characteristics under illumination are investigated. During the(More)
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