C. Chuang

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|This paper presents a detailed study on the impact of oating body in partially-depleted (PD) SOI MOS-FET on various digital VLSI CMOS circuit families. The parasitic bipolar eect resulting from the oating body is shown to degrade the circuit noise margin and stability i n general. In certain dynamic circuits and wide multiplex-ers, the parasitic bipolar(More)
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