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Using multiple layer liquid phase epitaxial (LPE) growth techniques, p(Al<inf>x</inf>Ga<inf>1-x</inf>As:Ge)-p(GaAs:Ge)-n<sup>+</sup>(GaAs:Te) solar cells were fabricated. Germanium was used as the p-type dopant to eliminate impurity diffusion and to maximize minority carrier diffusion lengths. These procedures provide precise control of the thickness and(More)
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