C. B. Boothroyd

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We have investigated the influence of a contact etch-stop layer ~ESL! on the local mechanical stress in a deep sub-micrometer complementary metal oxide semiconductor ~CMOS! field-effect transistor using convergent-beam electron diffraction with nanoscale resolution. By introducing a thin buffer layer of SiOxNy underneath the Si3N4 contact ESL, we have shown(More)
MOCVD-grown GaN on the N-polar surface of GaN substrates has been found to exhibit gross hexagonal pyramidal features (typically 10}50 lm in size depending on layer thickness). The evolution of the pyramidal defects is dominated by the growth rate of an emergent core of inversion domain (typically 100 nm in size). The inversion domains nucleate at a thin(More)
We have used both convergent beam electron diffraction (CBED) and high-resolution X-ray diffractometry (HRXRD) to investigate the influence of different graded layer thicknesses on the overall and interfacial strain phenomena in the SiGe/Si heterostructures. Broadening of the higher order Laue zone (HOLZ) reflections is often observed at the interface, and(More)
Mechanical stress due to trench isolation and contact etch-stop-layers (ESLs) has been reported to show a marked influence on the electron and hole mobility of nanoscaled MOSFETs. Conventional tools such as micro-Raman spectroscopy and X-ray diffraction for measuring strain are limited in resolution. By using convergent beam electron diffraction (CBED) with(More)
A detailed description of the application of the convergent beam electron diffraction sCBEDd technique for studying strain propagation in the Si1−xGex /Si blanket wafers as well as silicon-based metal–oxide–semiconductor field-effect transistors is presented. Specifically, a simple and robust experimental procedure and analysis for silicon lattice strain(More)
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