Byung-Seo Lim

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Czochralski silicon D. Macdonald, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt, M. Di Sabatino, and L. J. Geerligs Department of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra ACT 0200, Australia Institut für Solarenergieforschung Hameln (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany SINTEF Materials(More)
in phosphorus-compensated p-type silicon F. E. Rougieux, D. Macdonald, A. Cuevas, S. Ruffell, J. Schmidt, B. Lim, and A. P. Knights School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra ACT 0200, Australia Department of Electronic Materials Engineering, Research School of Physics and Engineering,(More)
OBJECTIVES Some plants were placed in indoor locations frequented by asthmatics in order to evaluate the quality of indoor air and examine the health benefits to asthmatics. METHODS The present study classified the participants into two groups: households of continuation and households of withdrawal by a quasi-experimental design. The households of(More)
This paper reviews the theory of metastable defect formation in compensated n-type silicon. By means of minority carrier lifetime measurements before and after defect activation we investigate the impact of 3 potential metastable defects relevant to the solar industry: Iron-boron pairs, chromium-boron pairs and the boron-oxygen defect.
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