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We developed a novel GaAs subwavelength structure (SWS) as an antireflective layer for solar cell applications. The GaAs SWS patterns were fabricated by a combination of nanosphere lithography (NSL) and reactive ion etching (RIE). The shape and height of the GaAs SWS were controlled by the diameter of the SiO2 nanospheres and the etching time. Various GaAs(More)
Three-dimensional (3D) nanostructures were obtained by the directed formation of multilayer block copolymer (BCP) thin films. The initial step in this strategy involves the assembly and cross-linking of cylinder-forming polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA) BCP, in which 1.5 mol % of reactive azido (-N(3)) groups were randomly incorporated(More)
We demonstrate AuCl3-doped graphene transparent conductive electrodes integrated in GaN-based ultraviolet (UV) light-emitting diodes (LEDs) with an emission peak of 363 nm. AuCl3 doping was accomplished by dipping the graphene electrodes in 5, 10 and 20 mM concentrations of AuCl3 solutions. The effects of AuCl3 doping on graphene electrodes were(More)
We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was mechanically deposited. UV light at a peak wavelength of 368 nm was successfully emitted by the FLG layer as transparent contact to p-GaN. The emission of UV light through the thin graphene layer was(More)
We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by non-uniform electric fields. Firstly, thin film LED structures with MQWs on sapphire substrate were coated with SiO(2) nanospheres, followed by inductively-coupled plasma etch to(More)
Articles you may be interested in Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111) Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate Effect of buffer layer(More)
Micro-droplet formation is an emerging area of research due to its wide-ranging applications in micro-fluidic based devices. For high resolution patterning and coating processes in various industrial fields, the formation of micro-droplets should be controlled according to the rheological properties of the working fluids. However, the physical properties of(More)
We demonstrate single CdTe microwire field-effect transistors (FETs) that are highly sensitive to ultraviolet (UV) light. Dense CdTe microwires were catalytically grown using a close-spaced sublimation system. Structural, morphological and transport properties in conjunction with the optoelectronic properties were systemically investigated. CdTe microwire(More)
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