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Most parts of the electromagnetic spectrum are well understood and exploited, but the terahertz region between the microwave and infrared is still relatively under developed. Potential receiver applications are wide-ranging and cross-disciplinary, spanning the physical, biological, and medical sciences. In this spectral region, Schottky diode technology is(More)
The sensitivity of the characteristic band edge frequencies of three different 500-GHz electromagnetic-bandgap crystals to systematic variations in unit cell dimensions has been analyzed. The structures studied were square bar woodpiles made with dielectric having epsiv <sub>r</sub>ap12 and epsiv<sub>r</sub>=37.5 and two wide bandgap epsiv<sub>r</sub>=37.5(More)
The design, fabrication, and characterization of a 500-GHz electromagnetic bandgap (EBG) based heterodyne receiver array is presented. The array contained seven planar dipole antennas that were photolithographically defined on a common 20-mum-thick quartz substrate. Each antenna incorporated a Schottky diode and was connected to coplanar transmission lines(More)
The development of GaAs Schottky diodes using substrate transfer techniques is presented. It is argued that these devices are limited in power handling by the choice of substrate material. To mitigate against these thermal effects, the migration to CVD diamond substrates is a logical progression. A significant programme aimed at developing this technology(More)
Harmonic mixers for high frequencies have been available for many years but conversion loss has always been relatively high and usually with many dips in the frequency response. There are many devices covering the lower waveguide bands, but relatively little above 110GHz. As part of Rohde &amp; Schwarz's new line of VNA extenders, RPG Radiometer Physics has(More)
This paper presents the design, manufacturing, and characterization of a waveguide based on electromagnetic-bandgap (EBG) technology working in W-band. A modified silicon EBG woodpile structure was used in order to improve the matching performance of the EBG waveguide to a standard rectangular waveguide. The transition between the silicon EBG woodpile(More)
Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the fabrication of discrete and integrated Schottky structures(More)