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We report experimental improvement of both RF and digital AC performance of a 28nm CMOS technology by predoping the gate poly. The results are explained in terms of the physical structure of the gate and the atomic structure of the gate TiN/Si interface in the gate stack.
Interface morphology dependent Schottky Barrier Height (SBH) and its modulation by substitutional dopants in NiSi<sub>2</sub>/Si interface have been investigated using density functional theory. An accurate band gap of Si was estimated by employing meta-GGA exchange correlation functional. We show that the SBH for electrons (in n-type semiconductor) is… (More)